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  • Küçük Resim
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    Improvement of diode parameters in Al/n-Si schottky diodes with coronene interlayer using variation of the illumination intensity
    (Elsevier, 2017-12-15) Pakma, Osman; Çavdar, Şükrü; Koralay, Haluk; Tuğluoğlu, Nihat; Yüksel, Ömer Faruk
    In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current–voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094 Ω at dark and 100 mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012 eV−1 cm−2 at dark and 100 mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.
  • Küçük Resim
    Öğe
    A novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diode
    (Jomard Publishing, 2019) Akın, Ümmühan; Yüksel, Ömer Faruk; Pakma, Osman; Koralay, Haluk; Çavdar, Şükrü; Tuğluoğlu, Nihat
    . A new Schottky barrier diode of Al/Coronene/n-GaAs/In was successfully prepared using spincoating method. The interface state and electrical properties of Al/Coronene/n-GaAs Schottky barrier diode have been studied by current– voltage (I–V) data in dark and light. The key diode parameters such as ideality factor, Schottky barrier height, rectification ratio, series and shunt resistances were evaluated from I–V data. The effective forward conduction mechanisms were determined as the thermionic emission at low voltage. Results obtained at room temperature (300 K) showed highly rectifying devices under dark and light. The barrier height ( B ) of the diode was obtained as 0.901 eV and 0.842 eV under dark and light, respectively. The ideality factor (n) of the diode was calculated to be 1.49 and 1.82 under dark and light, respectively. The values of series resistance ( ) Rs obtained from Cheung-Cheung technique were determined to be 18  and 16  under dark and light, respectively. The interface states density (Nss) of the Shottky device exhibits an exponential decrease with bias from 5.31x1010 eV-1 cm-2 and 7.24x1010 eV-1 cm-2 at (Ec-0.338) eV to 1.84x1010 eV-1 cm-2 and 2.17x1010 eV-1 cm-2 at (Ec-0.640) eV under dark and light, respectively.