Arama Sonuçları

Listeleniyor 1 - 3 / 3
  • Öğe
    Synthesis, characterization and experimental, theoretical, electrochemical, antioxidant and antibacterial study of a new Schiff base and its complexes
    (Elsevier, 2014-09-15) Baykara, Hacı; İlhan, Salih; Levent, Abdulkadir; Seyitoğlu, Mehmet Salih; Özdemir, Sadin; Okumuş, Veysi; Öztomsuk, Abdussamet; Cornejo, Mauricio
    A new Schiff base ligand was synthesized by reaction of salicylaldehyde with 1,6-bis(4-chloro-2-aminophenoxy)hexane. Then the Schiff base complexes were synthesized by metal salts and the Schiff base. The metal to ligand ratio of metal complexes was found to be 1:1. The Cu(II) complex is proposed to be square planar and the Co(II), Ni(II), Mn(II) and Zn(II) complexes are proposed to be tetrahedral geometry. The Ti(III) and V(III) complexes are proposed to be a capped octahedron in which a seventh ligand has been added to triangular face. The complexes are non-electrolytes as shown by their molar conductivities (ΛM). The structure of metal complexes is proposed from elemental analysis, FT-IR, UV–vis, magnetic susceptibility measurements, molar conductivity measurements, Mass Spectra and thermal gravimetric analysis. In addition antimicrobial and antioxidant studies, cyclic voltammetry of the complexes, theoretical 1H NMR and HOMO–LUMO energy calculations of the new di-functional ligand were done.
  • Öğe
    Characterization of an Au/n-Si photovoltaic structure with an organic thin film
    (Elsevier, 2013-08) Özaydın, Cihat; Akkılıç, Kemal; İlhan, Salih; Rüzgar, Şerif; Güllü, Ömer; Temel, Hamdi
    We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Φb of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 kΩ and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 μA under light of 8 mW/cm2.
  • Öğe
    The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application
    (Elsevier, 2016-05) Özaydın, Cihat; Güllü, Ömer; Pakma, Osman; İlhan, Salih; Akkılıç, Kemal
    In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current-voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φb) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.