5 sonuçlar
Arama Sonuçları
Listeleniyor 1 - 5 / 5
Öğe I V and C V F characteristics of aniline green N type silicon diode(İstanbul University, 2015) Özkan, Samet; Güllü, Ömer; Arsel, İsmail; Özaydın, Cihat; Pakma, Osman; Turut, AbdülmecitWe have studied the I-V, C-V and C-f characteristics of the Aniline Green (AG)/n-type Si structure. In organic/inorganic semiconductor contact applications, in order to keep the technological difficulties and unknowns to a minimum, silicon is generally chosen as the substrate semiconducting material. In this structure, deposition of organic materials on the inorganic semiconductor can generate large number of interface states at the semiconductor surface that strongly influence the electrical properties of the AG/n-Si structure. The values of the ideality factor, series resistance and barrier height obtained from two methods were compared, and it was seen that there was an agreement with each other. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently large voltages is caused by the presence of the effect of series resistance. Thus, the concavity of the forward bias current-voltage characteristics increases with the increasing series resistance value. The high resistance values have given the high ideality factors. Also, the higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the nSi that can follow the ac signal.Öğe Photoelectric and photocapacitance characteristics of Au/pyrene/N-Si MIS structures(Journal of Non-Oxide Glasses, 2017-04-01) Güllü, Ömer; Pakma, Osman; Özaydın, Cihat; Arsel, İsmail; Turmuş, MesutThis paper presents in-depth analysis of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared Au/Pyrene(C16H10)/n-Si hybrid organic-oninorganic semiconductor photovoltaic cells (total 43 diodes). The barrier heights, ideality factors and reverse bias saturation currents of all devices were extracted from the electrical characteristics. The mean barrier height, mean ideality factor and mean saturation current from I-V measurements were calculated as 0.79 ± 0.01 eV, 1.40 ± 0.08 and (1.01 ± 0.46)x10-8 A, respectively. Also, the photoelectric (I-V) and photocapacitance (C-V and conductance (G)-voltage (V)) characteristics of the Au/Pyrene/n-Si device under 100 mW/cm2 light illumination were investigated. It has been seen that the light illumination increases strongly the current, capacitance and conductance values of the device due to electron-hole charge pair generation. The C-V and G-V characteristics under illumination have shown a non-monotonic dependence of capacitance on frequency giving rise to a peak. This is attributed to the existence of electrically active traps. The open circuit voltage and short circuit current of the Au/Pyrene/n-Si device were extracted as 80 mV and 30 µA, respectively.Öğe Electrical parameters of safranine T N silicon contacts(İstanbul University, 2015) Güllü, Ömer; Arsel, İsmail; Özkan, Samet; Özaydın, Cihat; Pakma, Osman; Turut, AbdülmecitIn this work, it has been investigated current-voltage (I-V) andcapacitance-voltage-frequency (C-V-f) characteristics of the Al/SafranineT(ST)/n-Si structure. The values of the ideality factor, series resistance and barrier height calculated by using different methods were compared. It was seen that there was an agreement with each other. Also, it was seen that the barrier height value for our device was higher than one value of 0.50 eV of conventional Al/n-Si Schottky contact. The change in the barrier height value of the device was ascribed to ST thin layer modifying the effective barrier height by influencing the space charge region of the Si inorganic semiconductor. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently large voltages have been attributed to the effect of series resistance. Thus, the concavity of the forward bias current-voltage characteristics increases with increasing series resistance value. It has been seen that the values of capacitance are almost independent to a certain value of frequency, after this value, the capacitance decreases with increasing frequency. The higher values of capacitance at low frequencies have been attributed to the excess capacitance resulting from the interface states in equilibrium with the n-Silicon that could follow the alternating current signal.Öğe I V characteristics of the orange G P type silicon contacts(Dumlupınar Üniversitesi, 2015) Güllü, Ömer; Arsel, İsmail; Pakma, Osman; Özaydın, Cihat; Turut, AbdülmecitÖğe Organik arayüzey tabakalı Al/CuPc /p-InP kontakların fabrikasyonu ve elektriksel parametrelerinin incelenmesi(Batman Üniversitesi, 2015-07-01) Aslan, Filiz; Güllü, Ömer; Ocak, Yusuf Selim; Rüzgar, Şerif; Tombak, Ahmet; Özaydın, Cihat; Pakma, Osman; Arsel, İsmailBu çalışmada termal buharlaştırma metodu kullanılarak bakır fitalosiyanin (CuPc) p-InP kristali üzerine kaplandı. Yine termal buharlaştırma sistemi kullanılarak oluşan ince organik film üzerine vakum ortamında alüminyum metali kaplandı ve Al/CuPc/p-InP diyot yapısı oluşturuldu. Al/CuPc/p-InP diyotunun oda sıcaklığında, karanlık ve aydınlık ortamda akım-gerilim (I-V) ölçümleri alındı. I-V grafiğinden bu yapının doğrultucu özellik gösterdiği görüldü. Aydınlık ortamda yapılan ölçümler 100 mW/cm2 ışık şiddeti altında yapıldı ve bu ölçümler doğrultusunda diyotun fotodiyot özellik gösterdiği görüldü. Ayrıca farklı yöntemlerle Al/CuPc/p-InP Schottky diyotunun karakteristik parametreleri ( idealite faktörü (n) ,engel yüksekliği (Φb) ve seri direnç (Rs) ) hesaplandı.
