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Öğe Electrical properties of safranine T p Si organic inorganic semiconductor devices(Cambridge University, 2010-04-25) Güllü, Ömer; Asubay, Sezai; Biber, Mehmet; Kılıçoğlu, Tahsin; Turut, AbdulmecitWe investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate. It was seen that the safranine T organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59±0.02 eV and 1.80±0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67±0.10 eV and (6.96±0.37)×1014 cm-3, respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal.Öğe Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer(Scientific Publishers, 2019) Güllü, Ömer; Çankaya, Murat; Rajagopal Reddy, VarraIn the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier enhancement. Interfacial properties of the MIS diode with GO interlayer are extracted from current–voltage (I–V) measurement. The simple diode parameters such as barrier height and ideality factor are extracted from I–V plots, and the values are compared with those of conventional Al/n-InP MS contact. The value of barrier height (BH) for the Al/GO/n-InP contact is found as 0.85 eV. The BH value of 0.85 eV of the Al/GO/n-InP MIS structure is as high as around 100% compared to the value of 0.43 eV of the Al/n-InP reference contacts. We have showed that the value of 0.85 eV is one of the highest values presented for reference contacts with an interlayer.Öğe Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices(The European Physical Journal Applied Physics, 2018-05-02) Güllü, Ömer; Pakma, Osman; Özden, ŞadanThe room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.
