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Öğe Control of barrier heigth ofmetal/semiconductor contacts bymolecular organic film(2011-06) Güllü, Ömer; Turut, Abdulmecit; Kılıçoğlu, Tahsin; Özerden, EniseÖğe Characterization of Au N Inp photovoltaic structure with organic thin film(Uppsala University, 2012) Güllü, Ömer; Özerden, Enise; Rüzgar, Şerif; Asubay, Sezai; Pakma, Osman; Kılıçoğlu, Tahsin; Türüt, AbdulmecitÖğe Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device(Elsevier, 2010-03) Güllü, Ömer; Turut, Abdulmecit; Kılıçoğlu, TahsinIn this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had a good rectifying behavior. By using the forward bias I–V characteristics, the values of ideality factor (n) and barrier height (Φb) for the Al/CR/p-Si MIS device were obtained as 1.68 and 0.77 eV, respectively. It was seen that the Φb value of 0.77 eV calculated for the Al/CR/p-Si MIS device was significantly higher than value of 0.50 eV of the conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of the Al/p-Si diode was achieved by using a thin interlayer of the CR organic material. This was attributed to the fact that the CR organic interlayer increased the effective barrier height by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24×1013 to 2.44×1012 eV−1 cm−2.Öğe Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction(Elsevier, 2011-06) Ocak, Yusuf Selim; Kulakçı, Mustafa; Turan, Raşit; Kılıçoğlu, Tahsin; Güllü, ÖmerA ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380 K with 20 K intervals. The short current density (Jsc) and open circuit voltage (Voc) parameters have been determined between 40 and 100 mW/cm2. The photovoltaic parameters of the device have been also determined under 100 mW/cm2 and AM1.5 illumination condition.Öğe Electrical properties of safranine T p Si organic inorganic semiconductor devices(Cambridge University, 2010-04-25) Güllü, Ömer; Asubay, Sezai; Biber, Mehmet; Kılıçoğlu, Tahsin; Turut, AbdulmecitWe investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate. It was seen that the safranine T organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59±0.02 eV and 1.80±0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67±0.10 eV and (6.96±0.37)×1014 cm-3, respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal.Öğe Current-voltage, capacitance-voltage-frequency and ınterface characteristics ofmetal/organic dye molecule/P-Type Inp photovoltaic device(2011-09) Güllü, Ömer; Özerden, Enise; Kılıçoğlu, Tahsin; Turut, Abdulmecit
