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Öğe Wet chemical methods for producing mixing crystalline phase ZrO 2 thin film(Elsevier, 2016-07) Pakma, Osman; Özdemir, Cengiz; Kariper, İshak Afşin; Özaydın, Cihat; Güllü, ÖmerThe aim of the study is to develop a more economical and easier method for obtaining ZrO 2 thin films at lower temperature, unlike the ones mentioned in the literature. For this purpose, wet chemical synthesis methods have been tested and XRD, UV-VIS and SEM analysis of ZrO 2 thin films have been performed. At the end of the analysis, we identified the best method and it has been found that the features of the films produced with this method were better than the films produced by using different reagents, as well as the films reported in the literature. Especially it has been observed that the transmittance of the film produced with this method were higher and better than the films in the literature and the others. In addition, refractive index of the film produced with this method was observed to be lower. Moreover, by using the same method Al/ZrO 2 /p-Si structure has been obtained and it has been compared with Al/p-Si reference structure in terms of electrical parameters.Öğe The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application(Elsevier, 2016-05) Özaydın, Cihat; Güllü, Ömer; Pakma, Osman; İlhan, Salih; Akkılıç, KemalIn this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current-voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φb) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.Öğe The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics(Elsevier, 2010-03-04) Kavasoğlu, Abdülkadir Sertap; Yakuphanoğlu, Fahrettin; Kavasoğlu, Neşe; Pakma, Osman; Birgi, Özcan; Oktik, ŞenerIn this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220 K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald.
