2 sonuçlar
Arama Sonuçları
Listeleniyor 1 - 2 / 2
Öğe Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices(The European Physical Journal Applied Physics, 2018-05-02) Güllü, Ömer; Pakma, Osman; Özden, ŞadanThe room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.Öğe Interface effects of annealing temperatures in Al/HfO2/p-Si (MIS) structures(Gazi Üniversitesi, 2017-09-20) Özden, Şadan; Pakma, OsmanIn this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures were investigated by taking into consideration the effect of the interfacial insulator layer and surface states (Nss) at room temperature. All of the structures showed non-ideal I-V behaviour with ideality factor (n) in the range between 2.35 and 4.42 owing to interfacial insulator layer and surface states. The values of Nss and barrier height (fb) for three samples were calculated. The values of n and Nss ascend with increasing the insulator layer thickness (δ) while the values of fb decreases.
