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Öğe The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics(Elsevier, 2010-03-04) Kavasoğlu, Abdülkadir Sertap; Yakuphanoğlu, Fahrettin; Kavasoğlu, Neşe; Pakma, Osman; Birgi, Özcan; Oktik, ŞenerIn this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220 K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald.Öğe A novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diode(Jomard Publishing, 2019) Akın, Ümmühan; Yüksel, Ömer Faruk; Pakma, Osman; Koralay, Haluk; Çavdar, Şükrü; Tuğluoğlu, Nihat. A new Schottky barrier diode of Al/Coronene/n-GaAs/In was successfully prepared using spincoating method. The interface state and electrical properties of Al/Coronene/n-GaAs Schottky barrier diode have been studied by current– voltage (I–V) data in dark and light. The key diode parameters such as ideality factor, Schottky barrier height, rectification ratio, series and shunt resistances were evaluated from I–V data. The effective forward conduction mechanisms were determined as the thermionic emission at low voltage. Results obtained at room temperature (300 K) showed highly rectifying devices under dark and light. The barrier height ( B ) of the diode was obtained as 0.901 eV and 0.842 eV under dark and light, respectively. The ideality factor (n) of the diode was calculated to be 1.49 and 1.82 under dark and light, respectively. The values of series resistance ( ) Rs obtained from Cheung-Cheung technique were determined to be 18 and 16 under dark and light, respectively. The interface states density (Nss) of the Shottky device exhibits an exponential decrease with bias from 5.31x1010 eV-1 cm-2 and 7.24x1010 eV-1 cm-2 at (Ec-0.338) eV to 1.84x1010 eV-1 cm-2 and 2.17x1010 eV-1 cm-2 at (Ec-0.640) eV under dark and light, respectively.
