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  • Küçük Resim
    Öğe
    Characterization of an Au/n-Si photovoltaic structure with an organic thin film
    (Elsevier, 2013-08) Özaydın, Cihat; Akkılıç, Kemal; İlhan, Salih; Rüzgar, Şerif; Güllü, Ömer; Temel, Hamdi
    We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Φb of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 kΩ and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 μA under light of 8 mW/cm2.
  • Küçük Resim
    Öğe
    Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
    (Elsevier, 2012-01) Güllü, Ömer; Aydoğan, Şakir; Türüt, Abdülmecit
    In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.