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Öğe Temperature dependent electrical transport in Al/Poly(4-vinyl phenol)/ p -GaAs metal-oxide-semiconductor by sol-gel spin coating method(Hindawi, 2016-03-10) Özden, Şadan; Tozlu, Cem; Pakma, OsmanDeposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80-320 K while the current-voltage (I-V) characteristics of the structure were examined in the study. Ideality factor (n) and barrier height (φ b) values found in the experiment ranged from 3.13 and 0.616 eV (320 K) to 11.56 and 0.147 eV (80 K). Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.Öğe Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures(American Institute of Physics, 2012-02-15) Güllü, Ömer; Pakma, Osman; Türüt, AbdülmecitThe current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent rectifying behavior and that this structure increases the barrier height (φ b0). The main electrical parameters of these structures, such as ideality factor (n), barrier height, and average series resistance values were found to be 1.087, 0.726 eV, and 66.92Ω. This value of n was attributed to the presence of an interfacial insulator layer at the Ag/p-InP interface and the density of interface states (N ss) localized at the InP/DNA interface. The values of N ss localized at the InP/DNA interface were found at 0.675-E v in the 1.38 × 10 12 eV -1 cm -2.Öğe Current mechanism in HfO 2-gated metal-oxide-semiconductor devices(Hindawi, 2012-06-19) Pakma, OsmanThe present study aimed to examine the current density-voltage (J-V) characteristics of Al/HfO2/p-Si (MOS) structure at temperatures ranging between 100 and 320 K and to determine the structure’s current transport mechanism. The HfO2 film was coated on a single side of the p-Si (111) crystal using the spin coating method. The J-V measurements of the obtained structure at the temperatures between 100 and 320 K revealed that the current transport mechanism in the structure was compatible with the Schottky emission theory. The Schottky emission theory was also used to calculate the structure’s Schottky barrier heights (φB), dielectric constants (εr) and refractive index values of the thin films at each temperature value. The dielectric constant and refractive index values were observed to decrease at decreasing temperatures. The capacitance-voltage (C-V) and conductancevoltage (G/ω-V) characteristics of Al/HfO2/p-Si (MOS) structure was measured in the temperature range of 100–320 K. The values of measured C and G/ω decrease in accumulation and depletion regions with decreasing temperature due to localized Nss at Si/HfO2 interface.Öğe I-V-T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double gaussian distribution of barrier heights(Springer Nature, 2010-12-29) Pakma, Osman; Tozlu, Cem; Kavasoğlu, Neşe; Kavasoğlu, Abdülkadir Sertap; Özden, ŞadanIn this study, the current-voltage (I-V) characteristics of Au/Poly(4-vinyl phenol)/p-Si structures have been measured over a wide temperature range (100-300 K). These structures have been analyzed according to thermionic emission (TE) theory, as a result of which an abnormal decrease occurred in the zero-bias barrier height (φb0) and an increase in the ideality factor (n) was observed with temperature decrease and nonlinearity in the activation energy plot. By assuming a Gaussian distribution (GD) of barrier heights of the Au/Poly(4-vinyl phenol)/p-Si structures, barrier inhomogeneities are believed to responsible for this behavior. Evidence is given for the existence of a double GD with mean barrier heights (φ̄b0) of 1.042 and 0.623 eV, standard deviations of 0.138 and 0.081 V, and ideality factors 2.76 and 7.26, which remain effective in the temperature ranges of 180-300 and 100-160 K, respectively. As a result, without using the temperature coefficient of the barrier height, the modified ln(Io/T 2)-q2σo 2/2(kT)2 vs. q/kT plot gives φ̄b0 values and Richardson constants (A *) as 1.036 and 0.623 eV, and 36.20 and 19.99 A/cm2 K2, respectively. The effective Richardson constant value of 36.20 A/cm2 K2 is very similar to the theoretical value of 32 A/cm2K2 for p-Si. Consequently, the temperature dependence of the forward bias I-V characteristics of Au/Poly(4-vinyl phenol)//p-Si (MIS) structure could be attributed to the thermionic emission (TE) mechanism with double GD of the barrier heights.
