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Öğe Synthesis and characterization of vanadium oxide thin films on different substrates(Springer Nature, 2017-04-11) Güllü, Ömer; Pakma, Osman; Özaydın, Cihat; Özden, Şadan; Kariper, İshak AfşinIn this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. The structural properties of the produced films were examined by XRD and SEM analyses. Besides, Al/VOx/p-Si metal-oxide-semiconductor (MOS) structure was obtained by the same synthesis method. Doping densities of these MOS structures were calculated from frequency dependent capacitance–voltage measurements. It was determined that the interface states which were assigned with the help of these parameters vary according to frequency.Öğe Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer(Elsevier, 2012-01) Güllü, Ömer; Aydoğan, Şakir; Türüt, AbdülmecitIn this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.Öğe The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application(Elsevier, 2016-05) Özaydın, Cihat; Güllü, Ömer; Pakma, Osman; İlhan, Salih; Akkılıç, KemalIn this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current-voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φb) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.Öğe High barrier Schottky diode with organic interlayer(Elsevier, 2012-03) Güllü, Ömer; Aydoğan, Şakir; Türüt, AbdülmecitA new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good currentvoltage (IV) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitancevoltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the IV measurement of the diode under illumination, short circuit current (I sc) and open circuit voltage (V oc) have been extracted as 0.33 μA and 150 mV, respectively.
