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Öğe Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures(American Institute of Physics, 2012-02-15) Güllü, Ömer; Pakma, Osman; Türüt, AbdülmecitThe current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent rectifying behavior and that this structure increases the barrier height (φ b0). The main electrical parameters of these structures, such as ideality factor (n), barrier height, and average series resistance values were found to be 1.087, 0.726 eV, and 66.92Ω. This value of n was attributed to the presence of an interfacial insulator layer at the Ag/p-InP interface and the density of interface states (N ss) localized at the InP/DNA interface. The values of N ss localized at the InP/DNA interface were found at 0.675-E v in the 1.38 × 10 12 eV -1 cm -2.Öğe Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer(Elsevier, 2012-01) Güllü, Ömer; Aydoğan, Şakir; Türüt, AbdülmecitIn this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.Öğe High barrier Schottky diode with organic interlayer(Elsevier, 2012-03) Güllü, Ömer; Aydoğan, Şakir; Türüt, AbdülmecitA new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good currentvoltage (IV) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitancevoltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the IV measurement of the diode under illumination, short circuit current (I sc) and open circuit voltage (V oc) have been extracted as 0.33 μA and 150 mV, respectively.
