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Öğe Electrical analysis of organic dye based MIS Schottky contacts(Microelectronic Engineering, 2010-05-25) Güllü, Ömer; Turut, AbdulmecitIn this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By using the forward-biasI–Vcharacteristics, the values of ideality factor (n) and barrierheight (BH) for the Al/OG/p-Si MIS diode were obtained as 1.73 and 0.77 eV, respectively. It was seen thatthe BH value of 0.77 eV calculated for the Al/OG/p-Si MIS diode was significantly larger than the value of0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the potential barrier of Al/p-Si diode wasachieved by using thin interlayer of the OG organic material. This was attributed to the fact that the OGorganic interlayer increased the effective barrier height by influencing the space charge region of Si. Theinterface-state density of the MIS diode was found to vary from 2.79x1013to 5.80x1012eVx1cmx2.Öğe Electronic properties of Cu/n-InP metal-semiconductor structures with cytosine biopolymer(Polska Akademia Nauk, 2015-09) Güllü, Ömer; Türüt, AbdülmecitThis work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2:24 × 1013 eV-1cm-2 to 5.56× 1012 eV-1 cm-2.Öğe Ag katkılı metal/HfO2/c-Si yapılarının elektriksel özelliklerinin incelenmesi(Batman Üniversitesi Fen Bilimleri Enstitüsü, 2021-06-23) Demir, Arif; Pakma, OsmanBu tez çalışmasında katkısız ve gümüş (Ag) katkılı HfO2 ince filmler p-Si yüzeylere sol-jel daldırma metoduyla kaplanmış; yüzey analizleri X-ışını kırınım desenleri (XRD) ile incelenmiş ve elektriksel karakterizayonları ise oda sıcaklığında akım-gerilim (I-V) ölçümleri alınarak yapılmıştır. Katkısız ve Ag katkılı Al/HfO2/p-Si (MIS) yapılarının oda sıcaklığındaki I-V analizlerinden idealite faktörleri (n), doyum akım yoğunlukları (I0) ve engel yükseklikleri (ϕB) tayin edilmiştir. İlgili parametre değişimleri yapılardaki seri direnç etkileri de dikkate alınarak incelenmiş olup, arayüzey durum yoğunlukları belirlenmiştir. Sonuç olarak katkılamanın yapılardaki elektriksel parametreler üzerindeki etkisi raporlanmış ve literatür ile karşılaştırması yapılmıştır.Öğe Barrier modification by methyl violet organic dye molecules of Ag p InP structures(European Journal of Interdisciplinary Studies, 2016-05) Güllü, ÖmerThis work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2
