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Öğe A study of the rectifying behaviour of aniline green-based Schottky diode(Elsevier, 2010-02) Güllü, Ömer; Aydoğan, ŞakirAn Al/aniline green (AG)/Ga2Te3 device was fabricated and the current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the device have been investigated at room temperature. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. It was seen that the forward bias current–voltage characteristics at sufficiently large voltages has shown the effect of the series resistance. In addition, it was seen from the C–f characteristics that the values of capacitance have been decreased towards to the high frequencies. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the Ga2Te3 that can follow the ac signal.Öğe Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer(Elsevier, 2012-01) Güllü, Ömer; Aydoğan, Şakir; Türüt, AbdülmecitIn this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.Öğe Electrical characterization of the Al/new fuchsin/n-Si organic-modified device(Elsevier, 2010-03) Güllü, Ömer; Asubay, Sezai; Turut, Abdulmecit; Aydoğan, ŞakirThe current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. The ideality factor and the barrier height from the I–V characteristics have been determined as 3.14 and 0.80 eV, respectively. A modified Norde's function combined with the conventional I–V method has been used to extract the parameters including the barrier height and the series resistance. The barrier height and the series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there was a good agreement between those from both method. It has also been seen that the values of diode capacitance increased up to the constant values for the forward bias.Öğe High barrier Schottky diode with organic interlayer(Elsevier, 2012-03) Güllü, Ömer; Aydoğan, Şakir; Türüt, AbdülmecitA new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good currentvoltage (IV) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitancevoltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the IV measurement of the diode under illumination, short circuit current (I sc) and open circuit voltage (V oc) have been extracted as 0.33 μA and 150 mV, respectively.
