5 sonuçlar
Arama Sonuçları
Listeleniyor 1 - 5 / 5
Öğe Improvement of diode parameters in Al/n-Si schottky diodes with coronene interlayer using variation of the illumination intensity(Elsevier, 2017-12-15) Pakma, Osman; Çavdar, Şükrü; Koralay, Haluk; Tuğluoğlu, Nihat; Yüksel, Ömer FarukIn present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current–voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094 Ω at dark and 100 mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012 eV−1 cm−2 at dark and 100 mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.Öğe Electrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodes(Dumlupınar Üniversitesi, 2015-05) Güllü, Ömer; Pakma, Osman; Turut, Abdulmecit; Arsel, İsmailIn this work, we have studied the electrical characteristics of the Al/CR/p-Si MIS Schottky structures formed by coating of the organic material directly on p-Si substrate. It has been seen that the CR thin film on the p-Si substrate has indicated a good rectifying behavior. The barrier height and the ideality factor of the device have been calculated from the I-V characteristic. We have also studied the suitability and possibility of the MIS diodes for use in barrier modification of Si MS diodes. In addition, we have compared the parameters of the Al/CR/p-Si MIS Schottky diodes with those of conventional Al/p-Si MS diodes. We have observed that the b value of 0.77 eV obtained for the Al/CR/p-Si device was significantly larger than BH value of the conventional Al/p-Si MS contact. Thus, the modification of the interfacial potential barrier for metal/Si diodes has been achieved by using the CR organic interlayer. This was attributed to the fact that the CR interlayer increased the effective b by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24×1013 eV-1 cm-2 to 2.44×1012 eV-1 cm-2.Öğe Organik arayüzey tabakalı Al/CuPc /p-InP kontakların fabrikasyonu ve elektriksel parametrelerinin incelenmesi(Batman Üniversitesi, 2015-07-01) Aslan, Filiz; Güllü, Ömer; Ocak, Yusuf Selim; Rüzgar, Şerif; Tombak, Ahmet; Özaydın, Cihat; Pakma, Osman; Arsel, İsmailBu çalışmada termal buharlaştırma metodu kullanılarak bakır fitalosiyanin (CuPc) p-InP kristali üzerine kaplandı. Yine termal buharlaştırma sistemi kullanılarak oluşan ince organik film üzerine vakum ortamında alüminyum metali kaplandı ve Al/CuPc/p-InP diyot yapısı oluşturuldu. Al/CuPc/p-InP diyotunun oda sıcaklığında, karanlık ve aydınlık ortamda akım-gerilim (I-V) ölçümleri alındı. I-V grafiğinden bu yapının doğrultucu özellik gösterdiği görüldü. Aydınlık ortamda yapılan ölçümler 100 mW/cm2 ışık şiddeti altında yapıldı ve bu ölçümler doğrultusunda diyotun fotodiyot özellik gösterdiği görüldü. Ayrıca farklı yöntemlerle Al/CuPc/p-InP Schottky diyotunun karakteristik parametreleri ( idealite faktörü (n) ,engel yüksekliği (Φb) ve seri direnç (Rs) ) hesaplandı.Öğe The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics(Elsevier, 2010-03-04) Kavasoğlu, Abdülkadir Sertap; Yakuphanoğlu, Fahrettin; Kavasoğlu, Neşe; Pakma, Osman; Birgi, Özcan; Oktik, ŞenerIn this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220 K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald.Öğe A novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diode(Jomard Publishing, 2019) Akın, Ümmühan; Yüksel, Ömer Faruk; Pakma, Osman; Koralay, Haluk; Çavdar, Şükrü; Tuğluoğlu, Nihat. A new Schottky barrier diode of Al/Coronene/n-GaAs/In was successfully prepared using spincoating method. The interface state and electrical properties of Al/Coronene/n-GaAs Schottky barrier diode have been studied by current– voltage (I–V) data in dark and light. The key diode parameters such as ideality factor, Schottky barrier height, rectification ratio, series and shunt resistances were evaluated from I–V data. The effective forward conduction mechanisms were determined as the thermionic emission at low voltage. Results obtained at room temperature (300 K) showed highly rectifying devices under dark and light. The barrier height ( B ) of the diode was obtained as 0.901 eV and 0.842 eV under dark and light, respectively. The ideality factor (n) of the diode was calculated to be 1.49 and 1.82 under dark and light, respectively. The values of series resistance ( ) Rs obtained from Cheung-Cheung technique were determined to be 18 and 16 under dark and light, respectively. The interface states density (Nss) of the Shottky device exhibits an exponential decrease with bias from 5.31x1010 eV-1 cm-2 and 7.24x1010 eV-1 cm-2 at (Ec-0.338) eV to 1.84x1010 eV-1 cm-2 and 2.17x1010 eV-1 cm-2 at (Ec-0.640) eV under dark and light, respectively.
